一維奈米半導體/壓電材料在非量子局限尺寸下之光電性質與電子結構研究

陳政營

doi:10.6342/NTU.2012.00993

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一维奈米半导体/压电材料在非量子局限尺寸下之光电性质与电子结构研究

Optoelectronic Properties and Electronic Structures of One-dimensional Semiconducting/Piezoelectric Nanostructures with Sizes beyond the Quantum Confinement Regime

陈政营 , 博士　　导师：何志浩　　

英文 DOI： 10.6342/NTU.2012.00993

氧化锌；锆钛酸铅；奈米线；光侦测器；光电性质；奈米发电机；表面效应； ZnO ； PZT ； nanowire ； photodetector ； optoelectric properties ； nanogenerator ； surface effects

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摘要 │ 参考文献 (271) │ 国际计量

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In this thesis, we studied optoelectronic properties and electronic structures of one-dimensional (1-D) semiconducting/piezoelectric nanostructures with sizes beyond the quantum confinement regime and discussed their superior optoelectronic/photonic features as compared to their thin film of bulk counterpart.
First of all, since 1-D nanostructures have subwavelength diameters and large aspect ratios, which combined with the high permittivity of semiconductors lead to a strong optical anisotropy, we report a novel optically anisotropic metamaterial based on single crystalline ZnO nanowire arrays (NWAs) with highly oblique angles (75o–85o), exhibiting giant in-plane birefringence and optical polarization degree in photoluminescence emission. The in-plane birefringence ( 0.11) of oblique-aligned ZnO NWAs is almost one order of magnitude higher than that of ZnO bulk. The oblique-aligned NWAs not only allow important technological applications in passive photonic components but also benefit the development of the optoelectronic devices in polarized light sensing and emission.
Second, in 1-D nanostructures, with large surface-to-volume ratios and Debye lengths comparable to their diameters, their electronic and optoelectronic properties are strongly affected by the electronic structures at their surfaces. Here we systematically and in-depth investigated the correlation between electronic structures (especially at the surface) of 1-D (Er-doped) ZnO nanostrucrures and their optoelectronic properties through the following four subjects: (1) in situ probing the surface band bending (SBB) of the ZnO NWs using photoelectron spectroscopy in conjunction with the field-effect transistor measurements; (2) correlation between electronic structures of Er-Doped ZnO nanorod arrays and efficiency of 1.54 μm emission by studied by X-ray absorption spectroscopy; (3) enhanced near-band-edge emission of ZnO nanorods via the surface passivation; (4) correlation between photoresponse of ZnO nanobelts and the surface/interface effects. These studies are greatly beneficial for the 1-D nanostructure based device design of sensor and optoelectronic applications.
Finally, since ZnO is the wurtzite polar semiconductor and has the electromechanical coupling effect, piezoelectric characteristics of well-aligned ZnO NWAs were investigated for energy-harvesting nanodevices via its piezoelectricity. Besides, lead zirconate titanate [PbZr1−xTixO3 (PZT)] is a typical piezoelectric material, so the PbZr02Ti0.8O3 NWAs were also studied. This study is useful for optimizing the performance for nanogenerator applications.

参考文献 ( 271 ) 〈TOP〉

Chapter 1
连结：
[5] R. Yan, D. Gargas, and P. D. Yang, Nature Photonics 3, 569 (2009).
连结：
[8] Z. L. Wang, Adv. Funct. Mater. 18, 3553 (2008).
连结：
[9] M. W. Allen and S. M. Durbin, Appl. Phys. Lett. 92, 122110 (2008).
连结：
[10] C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, Nano Lett. 7, 1003 (2007).
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引用含有DOI的文献

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。 如想对DOI的使用与概念有进一步了解，请参考 （ ） 。

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。如想对DOI的使用与概念有进一步了解，请参考（）。