電子束微影之低溫短顯影研究

鍾政桓

doi:10.6342/NTU201601447

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电子束微影之低温短显影研究

Investigation of electron beam lithography with the low-temperature short-interval development technology

锺政桓 , 硕士　　导师：管杰雄　　

繁体中文 DOI： 10.6342/NTU201601447

电子束微影；邻近效应；显影速率；电子散射；小线宽图形；图形转移； E-beam lithography ； proximity effect ； developing rate ； electron scattering ； small line width pattern ； pattern transfer

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摘要 │ 参考文献 (27) │ 国际计量

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Lithography is the key technology in integrated circuits manufacturing process, and the improvement of it is the main reason that Moore's law can keep going. The rapid development of semiconductor industry and chips can become smaller and cheaper are closely related to the progress of lithography.For a long time, optical lithography is the mainstream in semiconductor industry, it is superior to other lithography method because of its mass production with high speed and low cost. However, with chips size become smaller and smaller optical lithography has reached its limit, it is necessary to investigate a new method for lithography, E-beam (Electron Beam Lithography) and EUV (Extreme Ultraviolet Lithography) are the main research direction lithography method in the future.       
In this thesis, we focus on how to reduce the proximity effect in electron beam lithography. We propose three method to solve proximity effect, including changing the resist, shortening the developing time, and reducing the developing temperature. After the experiment of changing resist, we compare the pros and cons in different resist, and we choose the most suitable resist for our subsequent experiment. Then we use the electron beam system to design single spot experiment and observing the diameter broadening of spots by changing exposure dose and developing condition. Through the experiment result, we found that by combining the short time and low temperature development we can reduce the proximity effect substantially. We further use the experiment result and traditional electron scattering research to derive our model for short interval development, then we fitted our model with experiment data and found that it fitted very well and every coefficient in our model have a good physical meaning. We next use our model to write different pitch lines pattern, and succeed in making 9nm small line width and 30nm small pitch line patterns, and also proved our single spot experiment result can apply to write line patterns and have the same trend. Finally, we use reactive ion etch and evaporation to transfer our pattern to silicon substrate successfully.

参考文献 ( 27 ) 〈TOP〉

[1] James D. Plummer, Michael Deal, Peter D. Griffin “Silicon VLSI Technology: Fundamentals, Practice, and Modeling ”, Prentice Hall
连结：
[2] Stepanova, Maria, Dew, Steven “Nanofabrication - Techniques and Principles ”,Springer
连结：
[3] T. H. P. Chang, “Proximity effect in electron-beam lithography ”, J. Appl. Phys., Vol. 12. No.6, Nov/Dec. 1975
连结：
[4] Vitor R. Manfrinato ,Jianguo Wen, Lihua Zhang “Determining the Resolution Limits of Electron-Beam Lithography: Direct Measurement of the Point-Spread Function ,” Nano Lett. 2014, 14, 4406−4412
连结：
[5] Bo Wu and Andrew R. Neureuther “Energy deposition and transfer in electron-beam lithography ,” J. Vac. Sci. Technol. B 19, Nov/Dec 2001
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引用含有DOI的文献

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。 如想对DOI的使用与概念有进一步了解，请参考 （ ） 。

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。如想对DOI的使用与概念有进一步了解，请参考（）。