氧化鎢薄膜還原於後硒化製程製備大面積多層二硒化鎢之研究

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氧化钨薄膜还原於後硒化制程制备大面积多层二硒化钨之研究

Investigation into the reduction of WOx films for the formation of large-area and a few WSe2 monolayers using a post-selenization process

林伟胜 , 硕士　　导师：阙郁伦;沈昌宏　　

英文

氧化钨；二硒化钨；後硒化；低温； tungsten oxide ； tungsten diselenide ； post-selenization ； low temperature

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摘要 │ 参考文献 (48) │ 国际计量

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In this work, we have successfully demonstrated the fabrication of a few WSe2 monolayers on the 8-inch Si/SiO2 wafer by the two-step CVD methods. Compared to conventional CVD ways, the two-step CVD method used in this work, including metal oxide deposition and chalcogenization, can achieve a large-area synthesis with precise thickness control by tuning the thickness of the as-deposited metal oxide. In addition, the thinnest thickness of the WSe2 film obtained by our method approaches to a single monolayer with some mixed bilayer areas and yet displaying photoluminescence due to the transition to direct band gap with the potential for optoelectronic applications.
    For the synthesis of WSe2, different parameters were optimized including oxide deposition and quality, substrate temperature, selenization time, forming gas ratio. For the optimization, the films were characterized under several material analysis, including Raman, XPS and TEM. In Raman spectrum, the relative intensity ratio and the full width at half maxima (FWHM) of characteristic peaks served as a criteria to judge the crystallinity of as-grown WSe2. XPS analysis was used to determine the WSe2 transformation rate. Besides, we made a use of fast Fourier transformation(FFT) to judge the grain size of as-grown WSe2 based on the TEM plane-view image. Then, after optimization we demonstrate large area growth with controlled thickness of high quality WSe2 judged from the material characterization.
    In the literature review of TMDCs material, the largest size of TMDCs fabrication is at the scale of 4-inch wafer so far. Here we demonstrate the formations of WSe2  with good uniformity in 8-inch wafer size. Besides, only sulfide based TMDCs such MoS2  has been synthesized at temperature closer to 500℃. However, TMDCs based on selenides are usually growth at higher temperatures. We successfully fabricated the high-quality thin layer WSe2 at temperatures as low as 500℃. We also expected to constantly lower the fabrication temperature of TMDCs in the future, especially for some flexible electronic applications.

参考文献 ( 48 ) 〈TOP〉

2. Lv, R.; Robinson, J. A.; Schaak, R. E.; Sun, D.; Sun, Y.; Mallouk, T. E.; Terrones, M., Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single-and few-layer nanosheets. Accounts of chemical research 2014, 48 (1), 56-64.
连结：
3. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L.-J.; Loh, K. P.; Zhang, H., The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nature chemistry 2013, 5 (4), 263-275.
连结：
4. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S., Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature nanotechnology 2012, 7 (11), 699-712.
连结：
5. Giovannetti, G.; Khomyakov, P. A.; Brocks, G.; Kelly, P. J.; van den Brink, J., Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations. Physical Review B 2007, 76 (7), 073103.
连结：
6. McKee, R.; Walker, F.; Chisholm, M., Crystalline oxides on silicon: the first five monolayers. Physical Review Letters 1998, 81 (14), 3014.
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引用含有DOI的文献

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。 如想对DOI的使用与概念有进一步了解，请参考 （ ） 。

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。如想对DOI的使用与概念有进一步了解，请参考（）。