應用於電阻式隨機存取記憶體具動態臨界點差異採樣架構之小偏移電流感測放大器

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应用於电阻式随机存取记忆体具动态临界点差异采样架构之小偏移电流感测放大器

A Small Offset Current Sense Amplifier with Dynamic Trip-Point-Mismatch Sampling Scheme for Resistive Random Access Memories

罗介甫 , 硕士　　导师：张孟凡　　

英文

小偏移电流感测放大器；动态临界点差异采样架构；电阻式随机存取记忆体； Small Offset Current Sense Amplifier ； Dynamic Trip-Point-Mismatch Sampling Scheme ； Resistive Random Access Memories

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摘要 │ 参考文献 (55) │ 国际计量

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In recent years, the growth of IoE devices requires non-volatile memory (NVM) for its large capacity, high speed, low energy and low cost. Flash memory has already been the mainstream of NVM since last century. However, flash memory doesn’t operate fast enough and cannot be accessed randomly. Furthermore, as technology proceeding, flash memory faces difficulties of scaling down to nanometer scale. Necessarily, researchers starts to seek candidates for replacing flash memory. Among all of the inventions, 1T1R ReRAM seems to be a promising choice due to its low write energy, fast speed and logic-process compatibility.
1T1R ReRAM cell is suitable for high speed and low supply voltage embedded applications, particularly for IoE devices with batteries. As size of ReRAM shrinking, cell resistance (RCELL) of ReRAM becomes higher and the wide write time distribution and RCELL reduces the R-Ratio (RH/RL) between high-RCELL state (HRS, RHRS) and low-RCELL state (LRS, RLRS). Thus, ReRAM memory macro suffers the following problem during read :
1.Small read sensing margin (ISM) due to small R-Ratio and process variation
2.Long access time (TCD) due to small R-Ratio
Here, we propose Dynamic Trip-Point-Mismatch Sampling Current Sense Amplifier (DTPMS-CSA) to solve the reading problem. DTPMS-CSA achieves 4.8x~7.1x smaller IOS than conventional Current-Latch CSA (CL-CSA). In addition, DTPMS-CSA achieves at least 1.6x faster speed and 3.1x better yield than the conventional one.
We implement our proposed SA at a 2Mb 65nm ReRAM macro. At typical VDD and BL-Length=512, DTPMS-CSA achieved 2.6ns read access time. Even more, DTPMS is 1.19ns faster than that of conventional CL-CSA.

参考文献 ( 55 ) 〈TOP〉

[2] ITRS, “2001 Technology Roadmap For Semiconductors,” IEEE Computer, vol. 35, issue 1, pp. 42–53, Jan. 2002.
连结：
[3] Francesco Menichelli, Mauro Olivieri, “Static Minimization of Total Energy Consumption in Memory Subsystem for Scratchpad-Based Systems-on-Chips,” IEEE Transactions on Very Large Scale Integration Systems, vol. 17, issue 2, pp. 161-171, Jan. 2009.
连结：
[4] A. G. Hanlon, "Content-Addressable and Associative Memory Systems a Survey," Electronic Computers, IEEE Transactions on , vol.EC-15, no.4, pp.509,521, Aug. 1966
连结：
[6] J. Li, R. K. Montoye, M. Ishii and L. Chang, “1 Mb 0.41 µm² 2T-2R Cell Nonvolatile TCAM With Two-Bit Encoding and Clocked Self-Referenced Sensing,” IEEE Journal of Solid-State Circuits, vol. 49, Issue 4, pp. 896-907, April. 2014.
连结：
[8] D. Smith, J. Zeiter, T. Bowman, J. Rahm, B. Kertis, A. Hall, S. Natan, L. Sanderson, R. Tromp, J. Tsang, “A 3.6ns 1Kb ECL I/O BiCMOS U.V. EPROM,” IEEE International Symposium on Circuits and Systems, vol. 3, pp. 1987-1990, May 1990.
连结：

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使用DOI作为永久连结

引用含有DOI的文献

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。 如想对DOI的使用与概念有进一步了解，请参考 （ ） 。

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。如想对DOI的使用与概念有进一步了解，请参考（）。