基板加熱對濺鍍TaN薄膜微結構及電性之影響

Effects of Substrate Temperature on the Electrical Properties and Microstructure of Sputtered TaN Films

10.6409/JMSE.200303.0001

盧陽明(Y. M. Lu)；翁睿哲(R. J. Weng)；黃文星(W. S. Hwang)

濺鍍 ； 氮化鉭 ； 基板溫度 ； 電性 ； 微結構 ； sputtering ； TaN ； substrate temperature ； electrical properties ； microstructure

材料科學與工程

35卷1期（2003 / 03 / 01）

1 - 4

繁體中文

鉭的氮化物因爲具有穩定的物理、化學特性所以在許多應用上都是相當可靠的材料，例如擴散阻障層、耐腐蝕與耐磨耗的材料、及積體電路中的穩定電阻器等等。 本研究的主要目的是在探討不同基板溫度對濺鍍TaN薄膜的電性及結晶結構的影響。研究方法是利用射頻磁控濺鍍系統在(100)p-type的矽晶片上濺鍍TaN薄膜。並用α-step量測膜厚，四點探針電性量測儀量測片電阻，及X光繞射儀(XRD)分析薄膜的結晶結構。 實驗結果顯示，當基板溫度由室溫加熱到400℃時，氮化鉭薄膜的優選方位從(111)轉變爲(200)，同時薄膜的結晶性變好，導電性提升，薄膜的電阻率由1.2Ωcm下降為0.025Ωcm。

Tantalum nitrides have been found to be promising materials for many applications, such as diffusion barriers, wear and corrosion-resistant materials, as well as precise and stable resistors used in active silicon integrated circuits. In this study, the effects of substrate temperature on the electrical and structural properties of tantalum nitride films were investigated. Films were deposited on silicon substrates by a RF magnetron sputtering system. Film thickness was measured by an α-step profilometer. The sheet resistance of all samples was detected by a four-probe meter, and XRD patterns were used to analyze the crystal structure of the films. The results reveal that when substrate temperature varies from 25℃ to 400℃, the resistivities of the tantalum nitride films drop from 1.2 Ωcm to 0.025 Ωcm. With the Increasing substrate temperature, the preferred orientations of the crystal phases also transit from (111) to (200).