奈米晶界高介電積體化薄膜電容之研究

Study on Nano-grain Boundary-high Dielectric Integrated Thin Film Capacitor

10.6409/JMSE.200303.0058

許清淵(C. I. Sheu)；張宏宜(H. Y. Chang)；鄭世裕(S. Y. Cheng)

奈米晶界 ； GBBL ； 晶界氧化驅入 ； Nano-grain boundary ； grain boundary layer ； complex impedance

材料科學與工程

35卷1期（2003 / 03 / 01）

58 - 63

繁體中文

使用Ti-二甲氧基乙醇(Ti-2meth)前軀體旋轉塗佈製作TiO2奈米晶界薄膜，以Ta及Ba爲半導化添加劑之半導化薄膜電阻率爲0.4Ω•cm。以形成SrTiO3晶界氧化驅入層得薄膜表面介電常數為1.6×l0^6，介電損失約8%。晶界物驅入氧化薄膜之複阻抗分析，不論薄膜厚度及表面方向量測之複阻抗皆比僅旋轉塗佈緻密化之薄膜高，但無法清楚簡單分辨晶粒阻抗機制與晶界阻抗機制，為多重機制之混合，可見SrTiO3前軀物的驅入並不見得順利進入薄膜晶界，有可能存在於薄膜表面、晶界及晶粒內。

The TiO2 nano-grain boundary thin film was successfully prepared by Ti-2-methoxy-ethanol precursor with spin coating method, thus obtained 0.4Ω•cm of resistivity for Ta and Ba doped thin film semiconductor. Furthermore, the thin film surface dielectric constant l.6×10^6 and dielectric loss 8% were achieved from the driven-in SrTiO3 grain boundary layer. From the complex impedance analysis of grain boundary driven oxidation thin film, the impedance of not only thin film surface but thickness is higher than the exactly spin coating densified thin film. It can not distinguish the impedance mechanism of grain boundary and grain interior clearly, so that is the hybrid mechanism, i.e., the SrTiO3 precursor is not only in the grain boundary but also in grain possibly.