單晶矽太陽電池基板Texturing結構之最佳化模擬與實驗

Textured Structure Optimization of Crystalline Silicon Solar Cells Using Ray-Tracing Simulation and Anisotropic Etching Techniques

10.6409/JMSE.200612.0201

楊佳明(C.M. Yang)；游仁州(J.C. Yu)；吳秉叡(B.R. Wu)；連水養(S.Y. Lien)；武東星(D.S. Wuu)；韓斌(P. Han)；洪瑞華(R.H. Horng)

單晶太陽電池 ； Texturing結構 ； 光學模擬 ； silicon ； light trapping ； texturing ； anisotropic etching ； solar cell

材料科學與工程

38卷4期（2006 / 12 / 01）

201 - 205

繁體中文

單晶矽晶片表面粗化製程(Texturing)目前已被廣泛的研究及使用，無疑是提升太陽能電池效率的關鍵技術，本研究以光學模擬軟體完成Texturing的模組，模擬矽基板上四角錐在不同顆粒大小，及各種大小晶粒分佈情況下的反射率，找出最佳Texturing的結構，得到最佳抗反射的效果。本實驗同時以KOH濕式蝕刻在單晶矽基板製作Texturing結構，藉由改變蝕刻溫度、KOH濃度、蝕刻時間等不同參數，得到與軟體模擬相似之結構，比較模擬與實驗之契合度。在本論文裡、由模擬結果得知非均勻顆粒分佈比均勻分佈可得到較低的反射率、我們也在實際的樣品反射率量測中得到驗證。

Optical loss reduction in mono-crystalline silicon solar cells obtained through surface texturing is one of the important issues in modern silicon photovoltaic science. Various pyramidal textured models were simulated using ray-tracing to evaluate the light trapping effects on the textured bulk Si substrates. Mono-crystalline silicon texturing is performed in a potassium hydroxide solution without isopropyl alcohol. Various etching temperatures, solution concentrations and etching times were attempted to optimize the texturing process. Correlation between the theoretical and experimental data was presented to examine the reliabilities of the proposed simulation techniques. We concluded that the simulation technique used in this work is very effective in optimizing the light trapping effect.