Cu(WN)/Si無阻障層界面反應物生成之研究

Formation of a Reacted Layer at the Barrierless Cu(WN)/Si Interface

10.6409/JMSE.200612.0219

朱瑾(J.P. Chu)；林宗新(C.H. Lin)

無阻障層 ； 反應層 ； 金屬化製程 ； barrierless metallization ； Cu films ； WN ； focused ion beam ； leakage current

材料科學與工程

38卷4期（2006 / 12 / 01）

219 - 222

繁體中文

本文係探討退火期間介於銅合金薄膜與無阻障層矽基板間之反應層的形成。含少量WN相之銅合金薄膜係將銅與鎢於Ar/N2之混合氣體中作反應性共濺鍍沉積而製得。經在530℃退火一小時，有一200 nm厚之反應層生成於Cu(WN)/Si界面，可作爲阻障層以保護薄膜免於與矽反應。X-ray繞射(XRD)、聚焦離子束(FIB)與穿透式電子顯微境(TEM)結果均證實此一反應層之形成，且獲知此一反應層由Cu2WO4、Cu3Si與Si2N2O組成。依漏電流與電阻量測結果得知銅摻雜微量之WN其熱穩定溫度可提升至530℃，顯示其在未來無阻障層金屬化製程之應用極具潛力。

This letter reports the formation of a reacted layer between Cu film and barrierless Si substrate during annealing. The Cu films with a minor WN phase are deposited by reactive co-sputtering of Cu and W in an Ar/N2 mixture gas. After annealing at 530℃ for 1 hr, a~200nm-thick reacted layer formed at the Cu(WN)/Si interface acts as a barrier to protect the film from extensive interactions with Si. X-ray diffraction, focused ion beam and transmission electron microscopy results confirm the presence of this layer and show this layer is mainly composed of Cu2WO4, Cu3Si, and Si2N2O. Leakage current and resistivity evaluations reveal the superior thermal reliability of Cu with a dilute amount of WN at the temperatures up to 530℃, suggesting its potential application in the advanced barrierless metallization.