| 题名 |
The Temperature Behavior of Resistivity and Hall Coefficient at High Pressure in n-GaSb(Se) |
| 作者 |
孫如意(Ru-Yih Sun) |
| 关键词 | |
| 期刊名称 |
Chinese Journal of Physics |
| 卷期/出版年月 |
13卷2期（1975 / 10 / 01） |
| 页次 |
135 - 140 |
| 内容语文 |
英文 |
| 英文摘要 |
Measurements of resistivity and Hall coefficient have been made on a selenium-doped GaSb in the temperature range of -25 to 300°K and at hydrostatic pressure of -13 Kbar. The results at low temperatures give direct evidence for impurity conduction related to the Se donor states associated with the L1-minima. An impurity activation energy of є1=0.074 eV is observed at elevated temperatures. |
| 主题分类 |
基礎與應用科學 >
物理 |
