Wavelength Modulation Reflectance Spectra of GaAs

馮素薇(S. F. Nee)；倪祖偉(T. W. Nee)；樊淑芳(S. F. Fan)；吳心恆(H. H. Wu)

Chinese Journal of Physics

19卷1期（1981 / 05 / 01）

35 - 43

英文

We report the wavelength modulation reflectance spectra (WMR) of GaAs single crystals between 2.5 and 3.5 eV at room temperature. Three samples with different doping are measured: Un-doped, Cr-doped with n=10^16 cm^(-3) and Zn-doped with p=10^19 cm^(-3). These spectra are measured by a double-beam electro-optical detection system which can effectively eliminate the background. In addition to ‘” the direct gap transitions L4.5^υ→L6^e and L6^υ→L6^e, we have observed the indirect L→Γ and L-X gap transitions. In doped samples, the additional impurity states-band transitions are also observed. These results are compared with existing theoretic energy band calculations and/or other related experiments.