Anisotropic Resistivities of Tl2Ba2CuO6+d Single Crystals with Different Oxygen Concentrations

H. M. Duan；R. M. Yandrofski；T. S. Kaplan；B. Dlugosch；J. H. Wang；A. M. Hermann

Chinese Journal of Physics

30卷3期（1992 / 06 / 01）

415 - 421

英文

We report for the first time single crystal anisotropic resistivity measurements of the single-copper-oxide layer material Tl2Ba2CuO6+d. At room temperature, the in-plane resistivities were on the order of 5X 10^(-4)Ω-cm and decrease with temperature according to a simple power law. C-direction resistivities were hvo orders of magnitude larger, also decrease with temperature.

1. 陳政佑(2011)。自主性轉換電路設計與應用。中原大學機械工程學系學位論文。2011。1-84。