Characterization of CdTe Film Grown on a Si(111) Substrate

Jui-Hsiang Pei；C. M. Lin；Der-San Chuu

Chinese Journal of Physics

36卷1期（1998 / 02 / 01）

44 - 52

英文

We report the characterization of polycrystalline CdTe films grown on Si( 111) by using UHV sublimination techniques. Films grown at substrate temperature below 250℃ exhibited streaked X-ray diffraction patterns. To understand the native oxide on the film surface, the films were exposed to a laboratory air environment in the growth chamber for several days. The XPS spectra were taken after each Ar-ion sputtering of these oxidized films. In order to obtain more information from the measured XPS data, we performed core-level line-shape analysis. Based on previously reported studies, CdTe, TeO2, and element Te are constituents in the film, while Cd is almost all in the -CdTe state. Raman scattering from oxidized CdTe film in the frequency of 550-900 cm^-1 reveals that TeO2 is the predominant oxide.