Optical Properties of Zn1-χMnχSe Epilayers Grown by Molecular Beam Epitaxy

W. C. Chou；C. S. Ro；D. Y. Hong；C. S. Yang；C. Y. Lin；T. Y. Lin；K. C. Chiu；T. R. Yang；C. M. Lin；D. S. Chuu；W. Y. Uen

Chinese Journal of Physics

36卷2期（1998 / 04 / 01）

120 - 127

英文

Zn1-χ,MnχSe (χ ≤ 0.78) peil ayers were grown on the GaAs (001) substrate with tilt angle 0, 3, 10, and 15 degrees toward [010] by the molecular beam epitaxy. The reflectivity, transmission, and photoluminescence experiments were used to measure the energy gap of the epilayers. A red shift of 4 meV was found as the substrate tilt angle increased from 0 to 15 degrees. The red shift in band gap energy is attributed to the increasing incoporation of smaller Zn ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, the lattice vibration of the Zn1-χ,MnχSe (0 ≤ χ ≤ 0.78) epilayers measured by the Raman scattering was found to follow the intermediate mode behavior of type lb instead of type lc. The force constants F(subscript MnSe) = 2.81 x 10^6 amu‧cm^(-2) and F(subscript ZnSe) = 3.96 x 10^6 amu‧cm^(-2) were obtained.

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