Fermi and Anti-Fermi Glass Transition and Subband Resonant Quantum Tunneling in Nb/Ti Metallic Multilayer Films

Juh Tzeng Lue；Shang-Yu Liang；Yuh-Wei Lee；Hang Ting Lue

Chinese Journal of Physics

38卷2S期（2000 / 04 / 01）

339 - 344

英文

Multilayer of Nb/Ti and NbN/Ti films with 30 periodic structure were sputtered onto silicon substrates. The current-voltage characteristics measured along the vertical junction at low temperatures exhibit nonlinear step-wise curves. The resonant subband quantum tunneling in the metallic multiple quantum wells can satisfactorily cxpress these peculiar behaviors. The Fermi and anti-Fermi glass transition showing itinerant metallic and insulating conduction properties are also observed at low currents and near critical temperatures.