Transport and Optical Studies of the D¡ -Conduction Band in Doped GaAs/AlGaAs Quantum Wells

C. H. Lee；Y. H. Chang；C. F. Huang；M. Y. Huang；H. H. Lin；C. P. Lee

Chinese Journal of Physics

39卷4期（2001 / 08 / 01）

363 - 368

英文

The properties of D¡ ions in quantum wells were studied. It is found that, with an intermediate concentration of D¡ ions, electrons in the quantum wells possess both band-like and impurity-like properties. The appearance of the Quantum Hall effect makes it possible to rule out the existence of an impurity band that is separated from the conduction band. The results are interpreted in terms of the formation of a D¡ conduction band, with the D¡ band becoming a tail of the conduction band. The implications of our experimental results on the metal-insulator transitions in doped semiconductors are discussed.