题名

Epitaxial Growth of ZrB2 (0001) on Si (111) for III-nitride Applications: A Review

作者

J. Tolle;J. Kouvetakis;D. -W. Kim;S. Mahajan;A. V. G. Chizmeshya;C. -W. Hu;A. Bell;F. A. Ponce;I. S. T. Tsong

关键词
期刊名称

Chinese Journal of Physics

卷期/出版年月

43卷1S期(2005 / 02 / 01)

页次

233 - 248

内容语文

英文

英文摘要

We review the growth behavior of epitaxial ZrB2(0001) films on Si(111) via the thermal decomposition of the unimolecular precursor Zr(BH4)4 studied in situ by low-energy electron diffraction and low-energy electron microscopy, and ex situ by cross-sectional transmission electron microscopy and atomic force microscopy. Under appropriate kinetic conditions, epitaxy was achieved in spite of the very large lattice mismatch between ZrB2(0001) and Si(111). The growth was followed from the initial nucleation stage to the final epitaxial film at various growth temperatures. At 900°C, the growth of ZrB2(0001) proceeded by the nucleation of two-dimensional islands. These islands eventually coalesced to form a continuous atomically smooth film. The interface between ZrB2(0001) and Si(111) was modeled theoretically and the most favorable interface consisted of the ZrB2(0001) growing on a Si(111)-(√3 ×√3)B surface with the Zr layer nearest to the interface and the B layer on the top surface. The in-plane a lattice parameter of the ZrB2(0001) surface has a perfect match with that of AlxGa1−xN where x = 0.26. Epitaxial layers of Al0.2Ga0.8N grown on a ZrB2/Si(111) substrate by metalorganic chemical vapor deposition (MOCVD) exhibit luminescence properties comparable to or better than those from layers of identical composition grown on sapphire substrates.

主题分类 基礎與應用科學 > 物理