题名 |
Upper Critical Field of Granular SnGe Samples Near the Superconductor-to-Insulator Transition |
作者 |
P. J. Lin;S. Y. Hsu |
关键词 | |
期刊名称 |
Chinese Journal of Physics |
卷期/出版年月 |
43卷3S期(2005 / 06 / 01) |
页次 |
662 - 665 |
内容语文 |
英文 |
英文摘要 |
We have measured the upper critical field, Hc2(T ), in granular SnGe samples with normal state resistivities, ρN, that range from 0.3 mΩ cm to 0.5 Ω cm. The samples demonstrate an evolution from superconducting to insulating in transport with increasing disorder. The temperature dependence of Hc2 shows a clear change in curvature between high ρN and intermediate ρN samples differing from the experimental results by Deutscher et al.. Our data is analyzed in terms of Ginzburg-Landau theory and grain structure induced disorder effect. The result is similar to the observation in high Tc superconductors that anisotropy induced fluctuation effect play an important role. |
主题分类 |
基礎與應用科學 >
物理 |