Dielectric and Thermodynamic Properties of Tin (II) Sulfide Thin Films

H. A. Hashem；S. Abouelhassan

Chinese Journal of Physics

43卷5期（2005 / 10 / 01）

955 - 966

英文

Stoichiometric SnS films were prepared, using the thermal evaporation technique, on clean glass substrates. According to x-ray investigations, the as-deposited films were in a partially crystalline state. The dielectric properties of the samples have been studied in the tem- perature range of 300-573 K and at different fixed frequencies (1, 10, and 100 kHz). The temperature dependence of ε', ε'', tan δ,σac, and σdc has been found, and a dielectric dispersion and Debye relaxation phenomena were noted. The activation energies, due to dc conductivity, ac conductivity and relaxation processes at different thicknesses, have been deduced. Thermodynamic parameters such as the free energy of activation △F, the enthalpy △H, and the change in entropy △S have been calculated. The results are discussed in terms of Debye relaxation, dispersion processes, and the defect states.