题名 |
Shapiro Steps Observed in a Superconducting Single Electron Transistor |
作者 |
Saxon Liou;Watson Kuo;Y. W. Suen;W. H. Hsieh;C. S. Wu;C. D. Chen |
关键词 | |
期刊名称 |
Chinese Journal of Physics |
卷期/出版年月 |
45卷2s2期(2007 / 04 / 01) |
页次 |
230 - 236 |
内容语文 |
繁體中文 |
英文摘要 |
The dc current-voltage (Ⅳ) characteristics of a superconducting single electron transistor irradiated with microwaves up to 18 GHz are experimentally studied. The switching current as a function of gate voltage demonstrates clear phase-charge duality in a Josephson junction. At higher microwave power levels, Shapiro steps in Ⅳ characteristics are observed. The step height in Ⅳ can be analyzed using the model an ac-voltage source applied to a single Josephson junction. |
主题分类 |
基礎與應用科學 >
物理 |