Ultrafast Strain-Induced Electronic Transport in a GaAs p-n Junction Diode

D M Moss；A V Akimov；R P Campion；A J Kent

Chinese Journal of Physics

49卷1期（2011 / 02 / 01）

499 - 505

英文

In this paper, we report the measurement of the electrical current induced by the passage of picosecond acoustic pulses through a GaAs p-n junction diode. The electric current pulses induced in the device without and with applied electrical bias are attributed to an ultrafast piezojunction effect. In conjunction with microwave electronic instrumentation, such a device may be used as a detector in picosecond acoustics experiments.