Acoustic Carrier Transport in InP-based Structures

M. Beck；G. Yang；P. V. Santos；R. Nötzel

Chinese Journal of Physics

49卷1期（2011 / 02 / 01）

520 - 526

英文

We demonstrate the ambipolar acoustic transport of optically generated electrons and holes by surface acoustic waves in InGaAsP waveguide structures grown on InP substrates. Transport is detected by monitoring the photoluminescence in the 1400-1500-nm wavelength range emitted by the recombination of the acoustically transported carriers several hundreds of micrometers away from the photoexcitation spot.