CHARACTERISTIC ANALYSIS OF SIC MOSFET AND RESEARCH ON THE DRIVE CIRCUIT FOR SIC MOSFET

Peng Mao；Ru-Ru Mei；Mao Zhang；Wei-Ping Zhang

SiC MOSFET ； drive circuit ； crosstalk ； LTSpice

技術學刊

35卷3期（2020 / 09 / 01）

135 - 144

英文

The differences on the material properties of silicon carbide (SiC) and silicon (Si) are compared in this paper. The electrical characteristics of MOSFET based on SiC and Si are also analyzed, and the switch trajectory is obtained by the simulation. A model is proposed in this paper to analyze the influence of drive resistance during the switching process. Then, the drive circuits suitable for typical circuits such as single-switch power circuit, bridge power circuit and dual-switch forward circuit adopting SiC MOSFET are obtained. In addition, the crosstalk problem in the bridge circuit is also analyzed and four improved auxiliary circuits are provided. Their advantages and disadvantages are compared by simulation. Some key tips about the layout design of the SiC MOSFET drive circuit are also proposed.

1. Arribas, A. P.,Shang, F.,Krishnamurthy, M.,Shenai, K.(2015).Simple and Accurate Circuit Simulation Model for SiC Power MOSFETs.IEEE Transactions on Electron Devices,62(2),449-457.
2. Ba, T. F.(2016).Beijing Jiaotong University.
3. Chen, Z. M.,Li, S. Z.(2009).Wide Band Gap Semi-conductor Power Electronics and Its Application.Beijing:China Machine Press.
4. Gao, F.,Zhou, Q.(2015).Gao, F., and Q. Zhou. 2015. SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Half-Bridge Circuit Driver and Half-Bridge Circuit Drive Method. CN Patent 104506028B.
5. Imaizumi, M.,Miura, N.(2015).Characteristics of 600, 1200, and 3300V Planar SiC-MOSFETs for Energy Conversion Applications.IEEE Transactions on Electron Devices,62(2),390-395.
6. Lelis, A. J.,Green, R.,Habersat, D. B.,El, M.(2015).Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs.IEEE Transactions on Electron Devices,62(2),316-323.
7. Liu, S.,Gu, C.,Wei, J.,Qian, Q.,Sun, W.,Huang, A. Q.(2016).Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs.IEEE Transactions on Electron Devices,63(11),4331-4338.
8. Mikamura, Y.,Hiratsuka, K.,Tsuno, T.,Michikoshi, H.,Tanaka, S.,Masuda, T.,Wada, K.(2015).Novel Designed SiC Devices for High Power and High Efficiency Systems.IEEE Transactions on Electron Devices,62(2),382-389.
9. Peng, Y. L.,Li, R. R.,Li, Y. B.(2015).Design of High Power SiC MOSFET Driver Circuit.Electrical Measurement and Instrumentation,52(11),74-78.
10. Rice, J.,Mookken, J.(2015).SiC MOSFET Gate Drive Design Considerations.Proceedings of 2015 IEEE International Workshop on Integrated Power Packaging (IWIPP), Chicago, IL, 3-6 May 2015,Washington, DC:
11. Tachiki, K.,Ono, T.,Kobayashi, T.,Tanaka, H.,Kimoto, T.(2018).Estimation of Threshold Voltage in SiC Short-Channel MOSFETs.IEEE Transactions on Electron Devices,65(7),3077-3080.
12. Wu, L.,Qin, J.,Saeedifard, M.,Wasynczuk, O.,Shenai, K.(2015).Efficiency Evaluation of The Modular Multilevel Converter Based on Si and SiC Switching Devices for Medium/High-Voltage Applications.IEEE Transactions on Electron Devices,62(2),286-293.
13. Yamaguchi, K.,Sasaki, Y.,Imakubo, T.(2014).Low Loss and Low Noise Gate Driver for SiC-MOSFET with Gate Boost Circuit.proceeding of 40th Annual Conference of the IEEE Industrial Electronics Society, Dallas, TX, 29 October-1 November 2014,Washington, DC:
14. Zhang, Z.,Wang, F.,Tolbert, L. M.,Blalock, B. J.(2014).Active Gate Driver for Crosstalk Suppression of SiC Devices in A Phase-Leg Configuration.IEEE Transactions on Power Electronics,29(4),1986-1997.
15. Zhong, Z. Y.,Qin, H. O.,Yuan, Y.,Zhu, Z. Y.,Xie, H. T.(2015).Crosstalk Suppression Method of Silicon Carbide MOSFET Bridge Arm Circuit.Advanced Technology of Electrical Engineering and Energy,34(5),8-12.