MBE Growth of GaInNAsSb Long Wavelength Lasers

10.29808/JVSROC.200508.0009

James S. Harris

真空科技

18卷2期（2005 / 08 / 01）

53 - 59

英文

Dilute nitride GaInNAs and GaInNAsSb alloys grown on GaAs have quickly become excellent candidates for a variety of lower cost 1.2-1.6μm lasers, optical amplifiers and high power Raman pump lasers that will be required in the networks to provide high speed communications to the desktop. Two particularly critical devices are 1) vertical cavity surface emitting lasers (VCSELs) which must operate un-cooled at high data rates (≥10Gbps), and 2) high power (≥500m W) edge emitting lasers for Raman amplifier pumps. Despite the fact that GaInNAs has been grown successfully, several challenges remain, including the limited solubility of N, phase segregation, non-radiative defects caused by the low growth temperature and ion damage from the N plasma source. This paper describes progress in overcoming some of the material challenges and progress in realizing record setting edge emitting lasers and the first VCSELs operating at 1.5μm based on GaInNAsSb.