Growth of Ⅱ-Ⅳ Semiconductor Nanostructures

10.29808/JVSROC.200508.0013

Wu-Ching Chou；Ming-Chin Kuo

真空科技

18卷2期（2005 / 08 / 01）

75 - 79

英文

Zn(subscript 1-x)Mn(subscript x)Te(0≤x≤0.12) quantum dots (QDs) were grown on the Zn(subscript 1-y)Mn(subscript y)Se(0≤y≤0.05) buffer layer by alternating supplying and conventional molecular beam epitaxy (MBE). The formation of Zn(subscript 1-x)Mn(subscript x)Te QDs was confirmed by the atomic force microscopy (AFM) measurements and reflection high energy electron diffraction (RHEED) patterns. For the atomic smooth buffer layers, the Stranski-Krastanov (SK) growth mode was observed. On the other hand, the Zn(subscript 1-x)Mn(subscript x)Te QDs could also be grown by the Volmer Weber (VW) island growth mode on the rough buffer layer The shape of ZnTe QDs is cone shape with a typical radius of several tenths (10 to 50) nm and height of a few (1 to 8) nm. The dot density ranges from 10^8/cm^2 to 10^10/cm^2. The size distribution is found to be heavily tailed. The photoluminescence (PL) study showed that the band alignment of the Zn(subscript 1-x)Mn(subscript x)Te/Zn(subscript 1-y)Mn(subscript y)Se QD system is type Ⅱ. The carrier capture times were 7 and 38ps for the VW and SK ZnTe/ZnSe QDs.