Study on the Band Line-up of GaAsSb/GaAs Quantum Wells

10.29808/JVSROC.200512.0005

蔡宗霖(Chung-Lin Tsai)；劉珀瑋(Po-Wei Liu)；廖剛華(Gang-Hua Liao)；李明翰(Ming-Han Lee)；林浩雄(Hao-Hsiung Lin)

真空科技

18卷3期（2005 / 12 / 05）

19 - 22

英文

Because of the band-bending effect, the blue-shift on the emission wavelength of GaAsSb/GaAs QW laser was observed as the cavity length was shortened. We utilized this effect to investigate the band line-up of the GaAsSb/GaAs QW. Through a simulation based on solving the Poisson and Schrödinger equations simultaneously for the band structure and optical gain of GaAsSb/GaAs QW, we found that the valence band offset ratio (Q) of the unstrained GaAs0.64Sb0.36/GaAs is 1.02, and the unstrained band-gap bowing parameter of GaAsSb is 1.31. In the calculation, band filling effect and the band-gap shrinkage induced by many-body effect were considered.