Fabrication of SiGe Multi-Doped Channel MESFETs

10.29808/JVSROC.200512.0008

王子睿(Tzu-Juei Wang)；羅培倫(Pei-Lun Lo)；吳三連(San-Lein Wu)；張守進(Shoou-Jinn Chang)

真空科技

18卷3期（2005 / 12 / 05）

34 - 36

英文

Using strained SiGe channel can improve the crucial p-type FETs performance parameters because of the high hole mobility. In our previous study, p-type SiGe Single-Doped Channel MESFETs (SDC-FETs) have been fabricated. However, the transconductance of SDC-FETs is reduced drastically with the increasing forward gate bias. In this paper, p-type SiGe Multi-Doped Channel MESFETs (MDC-FETs) are successfully fabricated and compared with SDC-FETs.