A Low Leakage Current in SiGe Hetro-junction FET Using by ICP Dry Etching Process

10.29808/JVSROC.200512.0009

李軍鑫(Chun-Hsin Lee)；吳三連(San-Lein Wu)；羅培倫(Pei-Lun Lo)；張守進(Shoou-Jinn Chang)；林育名(Yu-Min Lin)；王子睿(Tzu-Juei Wang)

真空科技

18卷3期（2005 / 12 / 05）

37 - 41

英文

In this paper, the use of inductively coupled plasma (ICP) dry etching technique on the mesa etching to fabricate SiGe-based devices is studied. Because ICP can generate high-density plasma under low pressure, independently control plasma density as well as ion bombardment energy, a better anisotropic etching profile and a reduced critical dimension loss can be obtained. Experimental results show that the SiGe doped-channel field-effect transistor using ICP mesa etching has higher breakdown voltage, lower leakage current, higher transconductance, and larger current drivability as compared to the device fabricated using wet mesa etching.