Effects of Dot-height Uniformity on the Performance of 1.3μm InAs Quantum Dot Lasers

10.29808/JVSROC.200512.0015

劉維昇(Wei-Sheng Liu)；張豪麟(Holin Chang)；綦振瀛(Jen-Inn Chyi)

真空科技

18卷3期（2005 / 12 / 05）

63 - 67

英文

We have systematically investigated the growth parameters of InAs quantum dots (QDs) so as to preserve the uniformity of dot height for 1.3μm QD laser diodes. It is found that the uniformity of dot height plays an important role in contributing to the enhancement of radiative efficiency and the narrowed linewidth of emission spectra. As-cleaved ridge laser diode prepared using the optimized dot-height uniformity exhibit low threshold current density as low as 250A/cm^2 and internal quantum efficiency as high as 63% under continuous-wave operation.