MBE Growth of High Quality Electronic Vertically Coupled InAs/GaAs Quantum Dots Laser Emitting around 1.3μm

10.29808/JVSROC.200512.0017

R. S. Hsiao；J. S. Wang；G. Lin；C. Y. Liang；K. F. Lin；T. W. Chi；J. F. Chen；J. Y. Chi

真空科技

18卷3期（2005 / 12 / 05）

72 - 75

英文

The influence of multi-layer stacks of vertically coupled InAs/GaAs quantum dot (QD) active region is studied with room temperature photoluminescence (RT-PL), double crystal X-ray and transmission electron microscopy (TEM). High efficiency electronic vertically coupled (EVC) quantum dots (QDs) lasers emitting near 1.3μm are fabricated. The transparency current density as low as 7 A/cm^2 per layer and the internal quantum efficiency as high as 90% were obtained. High crystal quality is therefore demonstrated with as many as 10 layers of highly strain EVCQD active region.