| 题名 |
Electrical Characteristic and Microstructure of Ternary Alloy Ta(subscript x)Co(subscript y)N(subscript z) Thin Films Deposited by Reactive Sputtering |
| DOI |
10.29808/JVSROC.200611.0004 |
| 作者 |
方昭訓(J. S. Fang)；柯銘禮(M. L. Ker)；陳慧津(H. C. Chen) |
| 关键词 |
Ta-Co-N films ； sputtering deposition ； amorphous ； diffusion barrier |
| 期刊名称 |
真空科技 |
| 卷期/出版年月 |
19卷2期（2006 / 11 / 30） |
| 页次 |
19 - 23 |
| 内容语文 |
英文 |
| 英文摘要 |
Reactive magnetron sputtering by using Ta-Co target under Ar/N2 mixtures were used to prepare Ta(subscript x)Co(subscript y)N(subscript z) thin films on silicon substrates. This work examined the deposition nitrogen partial pressure depend on crystal structure, surface morphology and electrical properties of the films by using X-ray diffractometry, electron microscopy, and four-point probe measurement after rapid thermal annealing the deposited films at an elevate temperature. The findings indicated that the nitrogen content monotonic increases from 46.4 to 48.6 at.% as the nitrogen flow ratio varies from 2.5 to 5000 and the thermal drive out of the nitrogen atoms in tantalum nitrides. |
| 主题分类 |
基礎與應用科學 >
基礎與應用科學綜合 基礎與應用科學 > 物理 工程學 > 工程學綜合 |
| 被引用次数 |
