新型電化學銅合金化薄膜導線之自我強化及自我對位圖案化分析

10.29808/JVSROC.201012.0002

呂育霖(Y. L. Lu)；陳松德(S. T. Chen)；黃朝鴻(C. H. Huang)；劉唐豪(T. H. Liu)；陳錦山(G. S. Chen)

真空電漿表面改質 ； 無電鍍 ； Cu-Mn合金薄膜 ； 自我對位 ； Vacuum Plasma Surface Pre-treatment ； Electroless Plating ； Cu-Mn Alloy Thin Film ； Self-alignment

真空科技

23卷4期（2010 / 12 / 31）

19 - 24

繁體中文

本研究採用真空電漿／化學溶液雙重表面改質，獨創一種全程濕式之超細微(≤3nm)、超緻密金屬晶種生長流程，以利探用無電鍍(Electroless Plating)製程，在SiO2介電層表面生長兼具自我強化與自我對位能力，並免除高電阻率異質阻障層的Cu-Mn合金薄膜與導線圖案。真空電漿表面預處理為增加晶種吸附的重要因素。密集植入的金屬晶種能夠觸發無電鍍Cu-Mn奈米薄膜的生長；透過晶種密度大小的調控可產生自我對位生長薄膜電極圖案的能力。Cu-Mn (0.4 at.%)超微銅合金薄膜的自我強化能力將於本文中獲得證實，另將針對晶種吸附強化及Cu-Mn自我強化之機制進行分析。

In this work, a new seeding process step, involving dual (vacuum plasma/chemical solution) surface pre-treatment, is developed for the dense growth of ultrafine (≤ 3 nm in size) seed particles on dielectric layer, facilitating the electroless deposition of barrier-free Cu-alloy thin films and electrode patterns with self-strengthening and self-aligned abilities. The vacuum plasma pretreatment is the key factor for the marked increase in seed density. The seeds can be site-selectively grown to trigger the growth of nanometer-scaled Cu-Mn thin-film electrode patters. The self-strengthening capacity of the Cu-Mn thin films with minute amounts of solutes (0.4 at.%) will be confirmed; the mechanisms of the seeding enhancement by the plasma pre-treatment and self-strengthening of Cu by minute doping will also be analyzed.