自組裝富勒烯分子層嵌入矽(111)基板之製備與電性量測

10.29808/JVSROC.201012.0004

蘇志川(Chih-Chuan Su)；黃至鵬(Chih-Pong Huang)；徐巧芳(Chiao-Fang Hsu)；何孟書(Mon-Shu Ho)

碳84 ； 富勒烯 ； Si 111-7x7 ； 掃描穿隧顯微鏡 ； 場發射 ； C84 ； Fullerene ； Si 111-7x7 ； STM ； Field Emission

真空科技

23卷4期（2010 / 12 / 31）

30 - 34

繁體中文

本文主要探討在表面嵌入單層富勒烯(Fullerene)分子層的矽(111)基板，綜合介紹此基板的製備以及電性的量測。藉由超高真空(Ultrahigh Vacuum, UHV)環境下對富勒烯分子自我組裝(Self-assembly)條件的控制，可讓單層富勒烯分子層，以六方最密堆積的形式排列並嵌入矽(111)的表面上，在增加蒸鍍量後，此分子層會以逐層生長(Layer-by-layer)的方式長成多層分子層。本研究中發現，表面嵌有單層富勒烯分子的矽(111)基板，具有許多優異的特性。當以超高真空掃描穿隧顯微術(Scanning Tunneling Microscopy, STM)觀測此單一分子層的表面形貌，會發現其距高比(Spacing-height Ratio)約為1.8左右，適合做為一有序排列的場發射源，而場發射效能量測的數據，亦支持此一結論。另外，I-V量測以及PL光譜的結果顯示，此基板具有半導體特性，且其能帶(Band Gap Energy)約為3.4±0.5eV，此寬能帶特性在光電元件領域具有很大的應用潛力。

In this study, a single layer of fullerene embedded Si (111) substrate was fabricated in an ultrahigh vacuum (UHV) chamber. The hexagonal close-packed structure of fullerene molecules was formed through a controlled self-assembly mechanism on the Si (111) surface. With special annealing process, the fullerene layers then grow layer-by-layer while increasing the amount of fullerene deposition. UHV scanning probe microscopy was used to investigate the characteristics of this fullerene embedded Si surfaces. The spacing-height ratio of the fullerene embedded silicon layer was around 1.8, which would be considered as a patterned field emission source. The I-V measurement and photoluminescence (PL) results showed the substrate has wide band gap energy that has potential for optoelectronic device applications.