掃描電位顯微鏡於銅銦鎵硒薄膜分析之應用

Applications of Scanning Kelvin Probe Microscopy on the Analysis of Cu (In, Ga) Se_2 Thin Films

唐瑋鍾(Wei-Chung Tang)；林偉聖(Wei-Sheng Lin)；張仁銓(Jen-Chuan Chang)；謝東坡(Tung-Po Hsieh)；張茂男(Mao-Nan Chang)

科儀新知

199期（2014 / 06 / 01）

57 - 65

繁體中文

本文介紹表面電位分析於探討影響銅銦鎵硒（CuIn_(1-x)Ga_xSe_2, CIGS）太陽能電池短路電流（short-circuit current, J_(sc)）因素之應用。針對三階段共蒸鍍（three-stage co-evaporation process）成長的銅銦鎵硒薄膜，以掃描電位顯微鏡（scanning kelvin probe microscopy, SKPM）取得銅銦鎵硒薄膜的表面電位縱深分布，再搭配X光光電子能譜儀（x-ray photoelectron spectroscopy, XPS）提供的銅銦鎵硒元素縱深分布輪廓，可藉以分析表面電位變化與銅銦鎵硒薄膜能隙以及內建電場的關係，並進一步探討影響元件短路電流的因素。

This article introduces the applications of surface potential analysis on investigating the factors influencing the short-circuit current of a CIGS solar cell. For the CIGS thin film grown by a three-stage co-evaporation process, we employed scanning Kelvin probe microscopy (SKPM) to obtain the depth distribution of the surface potential of a CIGS thin film. With the elemental depth profiles provided by X-ray photoelectron spectroscopy (XPS), one can study the relation between the surface potential variations and the energy gaps as well as the built-in electric field in a CIGS thin film. Furthermore, the factors influencing the short-circuit current of a CIGS solar cell can be studied.