EUV干涉微影技術

EUV Interferometric Lithography Technologies

陳柏熊(Po-Hsiung Chen)；林俊宏(Chun-Hung Lin)；劉瑞雄(Rai-Shung Liu)

科儀新知

240期（2024 / 09 / 30）

11 - 20

繁體中文;英文

在先進的半導體製程領域中，含金屬的EUV負光阻是一種具有高度潛力的未來技術節點材料。該材料可以通過EUV干涉微影技術（EUV-IL）進行評估。EUV-IL在高解析度光阻的開發中扮演著重要角色，這些光阻在應用於量產的EUV曝光機之前能先被EUV-IL評估。目前的EUV-IL設置在國家同步輻射研究中心（NSRRC）的台灣光源（TLS）21B2 EUV光束線上，並使用自行製作的EUV透射光柵光罩，成功實現了25奈米半間距的線／間圖案，這將可以用於先進的EUV光阻篩選，並對科學和業界的研究發展做出重要貢獻。

In the area of the semiconductor manufacturing process, the metallic-containing EUV negative resist is a high-potential material for future technology nodes. The material can be evaluated by EUV interference lithography (EUV-IL). EUV-IL plays an important role in the development of high-resolution resists before applying them to the projection optical systems for industrial applications. The current EUV-IL setup, developed at Taiwan Light Source (TLS) 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), employs a high-quality, self-fabricated transmission grating EUV mask. This setup successfully achieves line/ space patterns down to 25 nm half-pitch, making it suitable for advanced EUV resist screening and significantly contributing to both scientific and industrial research.