EUV光罩檢測技術

Extreme Ultraviolet Lithography Mask Inspection Technologies

李建霖(Chien-Lin Lee)；蔡佳勳(Jia-Syun Cai)；蔡坤諭(Kuen-Yu Tsai)

科儀新知

240期（2024 / 09 / 30）

21 - 29

繁體中文;英文

此篇文章對於極紫外光（EUV）微影技術所須之具多層反射膜結構之光罩，其製造過程中需要之檢測技術之發展現況做一簡介，並提出一些展望。EUV光罩之製程設計可採用許多和傳統光學光罩製程類似的步驟與設備，本文先由此出發做一簡介與比較，並指出幾個檢測EUV光罩特別之處。之後針對EUV光罩基底片（mask blank）製備過程之檢測技術做較深入之探討，並提出未來技術之發展方向。

This article introduces the current developments and prospects of inspection technologies which are necessary for the fabrication of EUV mask with a reflective multilayer structure. It can utilize many similar procedures and instruments used in the traditional optical mask processes into the design and manufacture of EUV mask one. In this article, it begins with a brief introduction and comparison, and also points out several particular aspects of EUV mask inspection. After that, it makes a further investigation about the inspection technologies throughout the fabrication of EUV mask blank. Finally, it indicates the direction of future development.