優化動態隨機存取記憶體品質於漏電流改善之實務研究

PRACTICAL STUDY ON OPTIMIZING THE QUALITY OF DYNAMIC RANDOM-ACCESS MEMORY FOR IMPROVING LEAKAGE CURRENT

10.6220/joq.201912_26(6).0001

王建智(Chien-Chih Wang)；羅貴利(Kuei-Li Lo)

萃智 ； 創新品質 ； 半導體製程 ； 驗證實驗 ； 數據分析 ； TRIZ ； innovative quality ； semiconductor process ； verification experiment ； data analysis

品質學報

26卷6期（2019 / 12 / 30）

353 - 365

繁體中文

動態隨機存取記憶體的發展趨勢是將元件微縮以達到高元件密度、快速度與低工耗的目標。元件微縮後所造成源極與汲極通道過短的品質異常問題，現階段是採用埋入式閘極的設計，但結果容易產生閘極與汲極有較大重疊區域的副作用，導致汲極漏電流的現象發生。本研究整合萃智技術與驗證實驗來優化汲極漏電流的品質。研究結果發現，使用不同角度的汲極離子植入方式，可改善汲極漏電流。進一步以實驗進行驗證，當傾斜角度21度時可達到業界預期改善的期望目標。本研究所提出的改善程序與策略已成功導入實際製程，具體成果可作為業界持續應用創新思考於品質優化的參考案例。

The trend of modern dynamic random-access memory is to shrink components to achieve high component density, speed, and low power consumption. The problem of the source and the drain channel being too short after the micro-shrinkage is at the present stage is the design of the buried gate, but it is easy to produce the side effect of the overlap between the gate and the drain, resulting in the gate inductive drain leakage phenomenon occurs. The result will directly affect the current loss of the capacitor, resulting in a reduction in data storage time. This study will integrate the theory of Theoria Resheneyva Isobretatelskehuh Zadach (TRIZ) and verification experiments to optimize the quality of leakage current. The study found that the use of different angles of bungee ion implantation can improve the gate-derived drain leakage current. Moreover, further verified by the experimental design, when the tilt angle of 21 degrees can reach the industry's expected improvement goals. The improvement procedures and strategies proposed in this study have been successfully imported into the actual process, and the specific results will serve as a reference for the industry to continuously apply innovation and think about quality optimization.

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