低溫微晶矽薄膜電晶體於可撓式電子元件之應用

Low Temperature Microcrystalline Silicon Thin Film Transistors for Flexible Electronics

10.29913/NDLC.201203.0004

連佑中；謝嘉民

可撓式電子元件 ； 微晶矽 ； 薄膜電晶體 ； Flexible Electronics ； Microcrystalline Silicon ； Thin Film Transistor

國家奈米元件實驗室奈米通訊

19卷1期（2012 / 03 / 01）

29 - 34

繁體中文

本團隊於玻璃基板上製作出共平面式上閘極在內摻雜微晶矽薄膜電晶體。亦利用x光繞射圖譜、掃描式電子顯微鏡及穿透電子顯微鏡驗證微晶矽薄膜之材料特性。其在200℃的低溫製程下，具有高載子遷移率（280平方公分／電壓—秒）、低次臨界擺幅（0.17 V/decade）及電流開關比大於5次方以上。另外，由其輸出特性可知其具有相當低之寄生電阻（1.52 MΩ-μm），展示了良好之電性。這種高性能、低溫製程元件非常適合應用於未來之面板產業。

In this work, the coplanar top gate bottom source/drain in-situ doped microcrystalline (μc-Si:H) thin film transistors (TFTs) were fabricated on the glass substrate. The X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM) were used to investigate the material properties of μc-Si:H. The μc-Si:H TFT demonstrates high mobility of 280 cm^2/V-S, low subthreshold swing of 0.17 V/decade and Ion/Ioff ratio larger than 10^5 under low temperature of 200℃. Moreover, the output characteristic shows good electric properties with fairly low parasitic resistance of 1.52 MΩ- μm. This device with high performance and low process temperature becomes a candidate for future display industry.