朝向更低能量之離子植入製程新趨勢與超淺接面的製作

New Trends in Ultra-shallow Junction Formation and Low Energy Ion Implantation

10.29913/NDLC.201203.0005

張文亮

超淺接面 ； 瞬間增強擴散 ； 植入損傷控制工程 ； 高質量分子植入 ； 低溫植入 ； USJ ； TED ； Implant Damage Engineering ； High Mass Molecular Implant ； Cold Implant

國家奈米元件實驗室奈米通訊

19卷1期（2012 / 03 / 01）

35 - 44

繁體中文

隨著半導體元件（Semiconductor Devices）不斷縮小，離子植入（Ion Implantation）製程必須降低植入能量（Implant Energy）和提高摻雜（Dopant）劑量（Dose），才能讓先進金屬氧化物半導體電晶體（MOSFET）擁有更高效能。此種元件之源極／汲極延伸區（Source/Drain Extension, SDE）所要求的新製程中，如超淺接面（Ultra-shallow Junction）製程，離子植入的能量和摻雜劑量已成為元件製造廠必須克服的瓶頸。同時，半導體元件在操作時漏電流（Leakage Current）的問題也在元件縮小時越趨嚴重。本文所要探索的就是以高質量分子植入（High Mass Molecular Implant）及低溫植入（Cold Implant）來提升半導體元件效率，同時兼顧製程可行性與達到製造成本的控制。

As semiconductor device scaling continues, previously acceptable implant technologies, such as ultra-shallow junction (USJ) fabrication for MOSFET SDE are struggling to meet advanced device requirements. There are three metrics that must be simultaneously achieved. They are low device leakage current, high dopant activation and junction depth control. In order to meet all of these goals, we found that high mass molecular implant and cold implant are two emergent technologies particularly well suited for USJ formation of the advanced MOSFET SDE. In the meantime, the productivity not only hasn't been compromised, but also been improved greatly.