34-42 GHz具可切換式VCO/PLL的90 nm CMOS單邊帶發射機

A 34-42 GHz Single-Side-Band Transmitter with Switchable VCO/PLL in a 90 nm CMOS Process

吳坤龍

Q頻帶 ； CMOS ； 發射機 ； 鎖相迴路 ； 毫米波 ； Q-band ； CMOS ； Transmitter ； PLL ； Millimeter-wave

國家奈米元件實驗室奈米通訊

24卷4期（2017 / 12 / 01）

4 - 9

繁體中文

本研究描述一個將PLL整合至LO的34-42 GHz單邊帶90奈米CMOS發射機。I/Q訊號輸入此發射機後經由兩階段升頻，在感興趣的頻段内可達到30dB的鏡像消除。在VCO中利用額外的開關電容來達到發射機的寬頻調節範圍。發射機RF輸出的相位雜訊距載波1 MHz時落在-70至-90 dBc/Hz的範圍，距載波10 MHz時則落在-100 dBc/Hz以下。發射機的IF-至-RF轉換增益可達30 dB，並擁有5 dBm的飽和功率，同時整個發射機的功率消耗為260 mW。透過開關控制功率放大器的源級偏壓，可達到50dB的開關比。此開關將可提供發射機額外的高速脈衝調變與進一步整合接收機的用途。這個1100×650 um^2的發射機晶片可當成一個原型電路來探索下世代通訊及陣列雷達系統。

The research describes a 34-42 GHz single-sideband 90nm-CMOS transmitter, which integrates a PLL into the LO chain. Moreover, using l/Q inputs and two-stage up-conversions, a 30 dB image-rejection ratio is achieved within the intended bandwidth. This transmitter's wideband tuning range is made possible by the use of additional capacitor on the VCO, and the phase noise of the resulting RF output is in the range of -70 to -90 dBc/Hz at 1MHz, and all below -100 dBc/Hz at 10 MHz. The IF-to-RF (Intermediate Frequency to Radio Frequency) conversion gain is 30dB, with saturated output power around 5 dBm, and the total power consumption is 260mW. Through the control of the DC bias, a 50dB power level difference can be obtained. Thus, it allows signal modulation and further combination with the receiver. This 1100 μm × 650 μm transmitter can be used as a prototypical circuit to explore next-generation mobile communication and civilian radar array systems.