短通道二維材料場效電晶體為基底的分子記憶體元件

Molecular Memory Based on Nano-channel 2D Material Field Effect Transistors

洪川傑；褚家容；李愷信；鐘元良；藍彥文

二維材料 ； 記憶體 ； 多層單元(MLC) ； 脈衝電壓 ； 場效電晶體 ； 2D Materials ； Memory ； Multi-level Cell ； Pulse Voltage ； Field Effect Transistor

國家奈米元件實驗室奈米通訊

25卷3期（2018 / 09 / 01）

14 - 17

繁體中文

記憶體在電子產品中扮演著相當重要的角色，但目前記憶體的發展卻面臨了高密度容量的挑戰。本研究提出一個以二維材料場效電晶體為基底的新穎記憶體元件，藉由分子修飾在二維材料的通道上形成自組裝的分子層，這些分子能夠被不同的閘極脈衝電壓來調節，而導致有不同的通道電導以及電荷儲存狀態。利用調整不同的閘極脈衝電壓大小以及脈衝持續時間來控制影響其分子的數量，就能夠達成多重儲存態的效果。我們認為這對於新穎記憶體元件來說是一個相當不錯的嘗試。

Memory plays a very important role in electronic products, but current memory development is facing the challenge of high density capacity. This research demonstrates the novel memory device based on two-dimensional material field effect transistor, in which self-assembled molecular layer is formed on two-dimensional material channel by molecular modification. The molecular configurations can be altered by different gate voltage pulse, leading to the different channel conductance and charge storage states. Using different gate voltage pulse and pulse duration times to control how many molecules are affected, devices can achieve multi-level storage states. We think this is a good step for the attempt in the development of novel memory device.