Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films

10.6180/jase.2003.6.3.02

I-Nan Lin；Yi-Ping Chou；Tong T. Chen

Co-doped Diamond Films ； Electron Field Emission Properties ； Current Image Tunneling Spectroscopy

淡江理工學刊

6卷3期（2003 / 09 / 01）

139 - 144

英文

Effect of boron and nitrogen co-doping on the electron field emission properties of the diamond films was examined using current image tunneling spectroscopy in atomic force microscopy (CITS, AFM). Tunneling current-voltage (I(subscript t)-V) characteristics measured by AFM indicate that incorporation of boron and nitrogen species induced the presence of impurity state. Such a characteristic is closely related to the local electron field emission behavior of the diamond films. The samples co-doped with 4 sccm boron and 3 sccm nitrogen possess smallest energy gap (E(subscript g)=1.62 eV) and largest emission ratio, as compared with that of other diamond films. These diamond films can be turned on at smallest electric field (E(subscript o)=6.4 V/μm), exhibiting largest field emission capacity (J(subscript e)=1,500 μA/cm^2).