氧化銦錫奈米結構應用於高靈敏性酸鹼度感測器

High Sensitivity pH Sensors Using Indium-tin-oxide Nano-columns

10.29688/MHJ.201102.0005

陳炳茂(Bing-Mau Chen)；黃展宏(Chan-Hung Huang)；吳明瑞(Ming-Ruei Wu)；郭振豪(Chen-Hao Kuo)；張家華(Chia-Hua Chang)；余沛慈(Pei-Chen Yu)

延伸式閘極場效電晶體 ； 酸鹼度感測器 ； 氧化銦錫 ； 奈米柱 ； 二氧化鈦 ； 飄移電壓 ； EGFET ； pH sensor ； ITO ； Nano-columns ； TiO2 ； Drift voltage

明新學報

37卷1期（2011 / 02 / 01）

57 - 65

繁體中文

本研究中，利用延伸式閘極場效電晶體使用不同的表面結構應用於酸鹼度感測器，元件採用斜向電子槍沉積技術製作氧化銦錫奈米結構於氧化銦錫透明導電薄膜表面，並濺鍍二氧化鈦包覆在氧化銦錫奈米結構表面，製作成奈米結構的感測電極。這種奈米結構成測器藉由增加感測膜與溶液的接觸面積，進而提升感測膜上吸附的H(上標 +)和OH(上標 -)鍵結。此新型態的感測器酸鹼度靈敏度為56.4mV/pH，經過多次測量數據證實是具有可再現性的，相較於用氧化銦錫薄膜所製作的55.5mV/pH，且此種奈米結構在pH10的溶液中前7小時的長時間穩定性：飄移電壓為2.26mV/hr，呈現在長時間測量下是穩定的。

In this research, different surface structures of extended gate field effect transistors were used for applying to pH sensor study. E-gun was used to deposit indium tin oxides (ITO) nanostructures on a ITO substrate, and then to deposit TiO2 on ITO nanostructures as electrodes of the nanostructures. The nano-structured surface electrodes enhance the pH sensitivity due to the increased contact area that effectively increases the adhesion density of H(superscript +) and OH(superscript -). This kind of new type pH meter has 56.4 mV/pH of sensitivity, and the sensitivity can be repeated by realizing after multiple measurements. Comparing to the sensitivity of the ITO film, the sensitivity is 55.5 mV/pH. This kind of nanostructures has excellence stability after 7-hour measurement. The drift voltage is 2.26 mV/hr, and it shows that the measurement is stable even after a long testing time.

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