金屬閘極在HfSiON絕緣層互補式金氧半場效應電晶體之可靠度研究

Impacts on Reliability of Metal Gated CMOSFETs with HfSiON Dielectric

10.29688/MHJ.201102.0008

陳啓文(Chii-Wen Chen)；顏良承(Liang-Cheng Yan)；葉郁龍(Yu-Long Yeh)；葉文冠(Wen-Kuan Yeh)；陳育廷(Yu-Ting Chen)

金屬閘極 ； 熱載子不穩定性 ； 負偏壓溫度不穩定性 ； 閘極漏電流 ； 低頻雜訊 ； Metal gate ； Hot-carrier instability ； Negative-bias-temperature instability ； Gate leakage current ； Low frequency noise

明新學報

37卷1期（2011 / 02 / 01）

85 - 93

繁體中文

本文探討有堆疊金屬閘極元件與沒有堆疊金屬閘極元件來做熱載子不穩定性(Hot-carrier instability, HCI)和負偏壓溫度不穩定性(Negative-bias-temperature instability, NBTI)後，元件參數值劣化的機制，及低頻雜訊(Low frequency noise)對氧化層內部所產生的缺陷做深入的研究。經過應力(Stress)實驗之後，使用金屬閘極的元件劣化品質有明顯的提升，此外，本論文亦研究利用低頻雜訊來探討元件高介電係數(High-k)層與界面層(interface layer)裡體積缺陷(Number of bulk trap, Not)密度分佈的量。實驗觀察到，使用金屬閘極元件具有較低的低頻雜訊以及閘極漏電流，因多晶矽與HfSiON會互相作用，造成多晶矽閘極HfSiON界面缺陷密度或HfSiON閘極絕緣層內缺陷密度之產生，而劣化閘極堆積之品質。

In this paper, we compared the degradation mechanics between CMOSFETs devices with and without stacked metal gate by using hot-carrier instability (HCI), negative-bias-temperature instability (NBTI) and low frequency noise technology. We found the deterioration of characteristics in metal gated device was decreased after stress. In addition, the he distribution of the bulk trap in high-k layer and interface layer was also to be discussed, we observed that devices with metal gate had lower low frequency noise and gate leakage current. It was attributed to more defects induced between Poly-Si/HfSiON/gated-oxide interface in devices without metal gate.

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