不同有機材料保護層對a-IGZO TFT影響探討

Electrical Characteristic on a-IGZO Thin-Film Transistors with Organic Materials as Passivation Layers

10.29688/MHJ.201108.0006

陳炳茂(Bing-Mau Chen)；林宗德(Tsung-Te Lin)；鄧立峯(Li-Feng Teng)；李宗澤(Zong-Ze Li)；殷尚彬(Shang-Ping Ying)；劉柏村(Po-Tsun Liu)

氧化銦鎵鋅 ； 保護層 ； 直流濺鍍 ； 臨界電壓 ； 次臨界擺幅 ； 電子遷移率 ； IZGO ； Passivation ； Direct current sputter ； Sub-threshold swing ； Threshold voltage ； Mobility

明新學報

37卷2期（2011 / 08 / 01）

79 - 86

繁體中文

在本研究中，使用直流濺鍍(DC Sputter)的方式沉積氧化銦鎵鋅薄膜(Indium-Gallium-Zinc-Oxide, IGZO)，在薄膜上旋塗不同的有機材料作為保護層(Passivation Layer)，探討保護層對元件特性造成的影響，發現臨界電壓(Threshold Voltage, V(下標 th))均會向左飄移、次臨界擺幅(Sub-threshold Swing, S.S)提升、飽和電流(Saturation Current)下降、電子遷移率(Mobility)下降，並推斷當有機材料內的水與有機溶液接觸到主動層造成破壞導致電性下降，並發現使用編號為SOG之高分子材料當保護層的特性最好。

In this study, we deposited amorphous indium gallium zinc oxide (a-IGZO) in the active layer by DC sputter, and compared the components of different spin coating with organic material as passivation layers. And found saturation current decay, threshold voltage shift to left direction, Sub-threshold Swing uplift and mobility decreased with passivation cause deterioration of device characteristics. Corollary is that water and organic solvents solvents contact with device resulting in damage with electrical properties of device. Finally, passivation layer with organic material by SOG has the best properties.

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