氧化錫成份對透明鋁鋅錫氧化物薄膜電晶體的影響研究

Study of Electrical Characteristic on a-AZTO Thin-Film Transistors with Different SnO2 Compositions

陳炳茂(Bing-Mau Chen)；王聖文(Sheng-Wen Wang)；吳明瑞(Ming-Juei Wu)；鄧立峯(Li-Feng Teng)；劉柏村(Po-Tsun Liu)

氧化銦鎵鋅 ； 保護層 ； 直流濺鍍 ； 臨界電壓 ； 臨界擺幅 ； 電子遷移率 ； AI-Zn-Sn-O TFT ； environment stability ； optical band gap of AI-Zn-Sn-O ； transparent amorphous oxide semiconductor

明新學報

39卷2期（2013 / 08 / 01）

1 - 15

繁體中文

在本研究中，以不同原子比例靶材及不同沉積條件製作氧化鋁鋅錫薄膜（Aluminum Zinc Tin Oxide，AZTO）為通道層，製作沒有任何保護層（Passivation Layer）氧化半導體薄膜電晶體（Thin Film Transistor，TFT），並探討其元件之電特性及物理特性，當氧化錫（SnO2）的濃度增加30至50 at.%，及氧氣流量變化從0、1及2 sccm的沉積條件，載子遷移率（Mobility）會提升在1.52到7.47 cm^2/Vs之間，元件的穩定性增加是因為錫濃度與金屬離子在AZTO薄膜的鍵合能（Bonding Energy）增強。此外，AZTO的光學能隙（Optical Band Gap，Eg）高於3.6 eV，對元件進行照光量測只吸收了波長低於360 nm的光，這些結果顯示，AZTO TFT在平板顯示技術的應用潛力。

We investigated on the physical characteristics and electrical performance of amorphous AI-Zn-Sn-O thin film transistor (AZTO TFT) without any channel passivation layer. The mobility enhanced from 1.52 to 7.47 cm^2/Vs while the concentration of SnO2 increased from 30 to 50 at.% and oxygen gas flow rate changed from 0 to 2 sccm at deposition process. The improved device stability can be attributed to the increase of Sn concentration and enhancement of bonding energy of metal ion in the AZTO film with the increase of O2 gas flow rate. In addition, the optical band gap of AZTO is higher than 3.6 eV, which performed immunity against visible light and absorbed light with wavelength lower than 360 nm. These results showed the application potentials of AZTO TFT device on flat panel display technology.

1. Baeuerle, R.,Baumbach, J.,Lueder, E.,Siegordner, J.(1999).A MIM driven Display with Colour Filters on 2 diagonal Plastic Substrates.SID Symposium Digest of Technical Papers,30(1),14-17.
2. Dumont, E.,Dugnoille, B.,Bienfait, S.(1999).Simultaneous determination of the optical properties and of the structure of r.f.-sputtered ZnO thin films.Thin Solid Films,353,93-97.
3. Eman, N.W.,Glu, E.,Corla, C.,Liang, G.S.(2001).Transactions on Ultrasonic, Ferroelectrics, and Frequency Control.IEEE,48(6),1721-1727.
4. Gao, X.D.,Li, X.M.,Yu, W.D.(2004).Preparation, structure and ultraviolet photoluminescence of ZnO films by a novel chemical method.Journal of Solid State Chemistry,177(10),3830.
5. Goksen, K.,Gasanly, N. M.(2007).Optical Absorption and Reflection Studies of T14InGa3S8 Layered Single Crystals.ACTA PHYSICA POLONICA A,112
6. Hidaka, Hisao,Asai, Yuichi,Zhao, Jincai,Nohara, Kayo,Pelizzetti, Ezio,Serponeg, Nick(1995).Photoelectrochemical Decomposition of Surfactants on a TiO2/TCO Particulate Film Electrode Assembly.American Chemical Society,99(20),8244-8248.
7. Kessels, W. M. M.,Smets, A. H. M.,Marra, D. C.,Aydil E. S.,Schram D. C.,van de Sanden, M. C. M.(2000).Surface reactions during plasma enhanced chemical vapor deposition of silicon and silicon based dielectrics.Thin Solid Film,383,154-160.
8. Ortega-Lopez, M.,Avila-Garcla, A.,Albor- Aguilera, M.L.,Aanchez, VM.(2003).Improved efficiency of the chemical bath deposition method during growth of ZnO thin films.Mater. Res. Bull.,38,1241.
9. Ortega-Lopez, M.,Avila-Garcla, A.,Albor-Aguilera, M.L.,Aanchez, Y.M.(2003).Improved efficiency of the chemical bath deposition method during growth of ZnO thin films.Mater. Res. Bull.,38,1241.
10. Ueda, Kenji,Tabata, Hitoshi,Kawai, Tomoji(2001).Magnetic and electric properties of transition-metal-doped ZnO films.Applied Physics Letters,79(7),988-990.
11. 馬文元、袁煥之、黃慶能(2008)。行政院國家科學委員會補助專題研究計畫行政院國家科學委員會補助專題研究計畫,國立交通大學。