题名

Sub-1-V低電壓帶隙參考電壓電路之實作

并列篇名

Implementation of a Sub-1-V Low Voltage Bandgap Reference Circuits

DOI

10.30167/JOIT.201012.0006

作者

李民慶(Min-Chin Lee)；葉庭嘉(Ting-Chia Yeh)；嚴紹祖(Shao-Zu Yen)

关键词

溫度係數 ； 帶隙參考電壓電路 ； 單增益頻寬 ； PTAT電壓 ； Temperature Coefficient ； Bandgap Reference Circuit ； Unit Gain Bandwidth ； PTAT Voltage

期刊名称

亞東學報

卷期/出版年月

30期（2010 / 12 / 01）

页次

41 - 48

内容语文

繁體中文
中文摘要

CMOS帶隙參考電壓電路，擁有低功率、低溫度係數與供應電壓獨立之特性，已成多數混合訊號積體電路中提供參考偏壓電源之核心架構主流，為更進一步提升整體效率；本文針對組成一改良型低電壓帶隙參考電壓電路之架構單元：參考電壓源、運算放大器、核心帶隙參考電壓電路及分壓回授電路之設計加以分析討論，最後利用TSMC 0.35μm 2P4M製程技術模擬，設計完成一晶片面積為0.700×0.550平方公厘，功率消耗約0.153mW，供應電壓可從1.9V至3.3V，溫度係數16ppm/℃，PSRR為63dB，輸出參考電壓可穩定在0.6V之低電壓帶隙參考電壓電路。
英文摘要

CMOS Bandgap Reference Circuit is main bias voltage source of mixed-mode Integrated Circuit system, due to its low power dissipation, low temperature coefficient and independent of supply voltage characteristics. In this paper, the main components within improved low voltage Bandgap reference circuits consist of the bias current source, OP Amp, the core cell of reference voltage circuit and divider feedback circuit are analyzed and discussed in detail. The sub-1-V low voltage Bandgap reference circuit has been fabricated with a standard TSMC 0.35 μm 2P4M process Experimental results show that the chip area is 0.700×0.550mm^2, can operate with supply voltage from 1.9V to 3.3 V, power dissipation about 0.153mW, and full range temperature stability from -40℃ to 140℃ with temperature coefficient less 18ppm/℃, PSRR is 63 dB, output voltage variation less 2mV, and output reference voltage stable at 0.6V.
主题分类 人文學 > 人文學綜合
人文學 > 中國文學
基礎與應用科學 > 基礎與應用科學綜合
醫藥衛生 > 醫藥衛生綜合
工程學 > 工程學綜合
社會科學 > 社會科學綜合
参考文献
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