利用射頻濺鍍法製備TiO_2緻密層於染料敏化太陽電池性能提升之研究

Preparation of a TiO_2 Compact Layer for Improving Performance of Dye-Sensitized Solar Cells by using RF Sputtering

黃俊杰(JUNG-JIE HUANG)；黃德菩(DE-PU HUANG)；何映融(YING-RONG HO)

濺鍍 ； 二氧化鈦 ； 緻密層 ； 染料敏化太陽電池 ； sputtering ； TiO_2 ； compact layer ； dye-sensitized solar cell

科學與工程技術期刊

16卷1期（2020 / 03 / 01）

39 - 44

繁體中文

本研究以射頻濺鍍法沉積TiO_2薄膜於ITO玻璃基板上作為染料敏化太陽電池（dye-sensitized solar cell, DSSC）之緻密層，以避免ITO與電解液接觸導致的電荷復合，在TiO_2緻密層24 nm時，ITO和多孔性TiO_2之間的粘附性得到改善且EIS測量中的界面轉移電阻R_2降低。較低的R_2代表DSSC中電子的電荷轉移過程獲得改善，此時有以下光電轉換特性：短路電流密度（JSC）13.10 mA/cm^2、開路電壓（Voc）0.70V、填充因子（FF）54.37%及光電轉換效率（η）5.02%。與沒有緻密層的DSSC相比，TiO_2緻密層使DSSC的光電轉換效率由4.63%提高至5.02%，進一步證明濺鍍法TiO_2緻密層可有效改善DSSC元件之特性。

In this study, RF sputtering was used to deposit a TiO_2 film on an ITO glass substrate as a compact layer on a dye-sensitized solar cell (DSCC) to avoid charge recombination caused by contact between the ITO glass and the electrolyte. When the thickness of the compact layer was 24 nm, the adhesion of porous TiO_2 on the ITO glass substrate and interface transfer resistance (R_2) obtained through EIS measurement improved. A low R_2 value indicates an improvement in the charge transfer process of electrons in the DSSC with the following photovoltaic characteristics: short circuit current density (Jsc) = 13.10 mA/cm^2, open circuit voltage (Voc) = 0.70 V, fill factor (FF) = 54.37%, and light to electricity conversion efficiency (η) = 5.02%. Compared with the DSSC without the TiO_2 compact layer, adding the TiO_2 compact layer to the DSSC increased the photoelectric conversion efficiency from 4.63% to 5.02%. Thus, the sputtering TiO_2 compact layer can effectively improve the properties of the DSSC device.

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