以化學氣相沉積法合成一維氧化銦鋅奈米線結構及其特性分析

Synthesis and Characterization of One-Dimensional Indium Zinc Oxide Structure by Chemical Vapor Deposition

10.29548/BGYY.201103.0010

陳志榮(Chih-Jung Chen)

化學氣相沉積法 ； 氧化銦鋅 ； 奈米線 ； chemical vapor deposition ； IZO ； nanowires

修平學報

22期（2011 / 03 / 01）

153 - 162

繁體中文

本論文主要利用化學氣相沉積法經由氣液固(VLS)機制在低製程溫度下成長一維氧化銦鋅(IZO)奈米線於ITO基板上，並使用掃描電子顯微鏡觀察一維氧化銦鋅奈米線樣本的表面形態、結構、長度、線徑與分佈情形，並利用X光單晶繞射儀鑑定其結構的結晶性，再利用X光能量散譜儀(EDS)做一維氧化銦鋅奈米線的成份分析。本實驗在成長一維氧化銦鋅奈米線的最佳實驗結果（參數為銦(In)顆粒的製程溫度為700℃、鋅(Zn)粉末的製程溫度為550℃、成長壓力為1 Torr、氬氣流量為50 sccm、氧氣流量為10 sccm），由FE-SEM的截面分析發現，本實驗氧化銦鋅奈米線為中空結構，奈米線線徑約為100 nm到150 nm，長約為5 μm，電阻值約20-150 Ω。

In this study, we report the fabrication of one-dimensional Indium Zinc Oxide (IZO) on an ITO glass substrate by chemical vapor deposition at low temperature via vapor-liquid-solid (VLS) mechanism. The morphologies and structural properties of the IZO nanowire were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and energy dispersive spectrometer (EDS). The IZO nanowires optimal experimental parameters are growth pressure is 1 Torr, argon gas flow of 50 sccm and oxygen flow of 10 sccm. In this condition, the idea temperatures are 700℃ for indium (In) particles and 550℃ for zinc (Zn) particles. The SEM images reveal that IZO nanowires have uniform diameters of approximately 100 nm to 150 nm, and their lengths are up to 5 μm The XRD results demonstrate that the nanowires are crystalline with highly preferential orientation. And our EDS analysis also proves that the composition ratio and this material are IZO nanowires.

1. Dalal, S H,Baptista, D L,BKTeo, K,Lacerda, R G,Jefferson, D A,Milne, W I(2006).Controllable growth of vertically aligned zinc oxide nanowires using vapour deposition.Nanotechnology,17,4811-4818.
2. J.T. Littleton, U.S. Patent, 2,118,795, (1938）.
3. Minami, Tadatsugu(2008).Substitution of transparent conducting oxide thin films for indium tin oxide transparent electrode applications.Thin Solid Films,516,1314-1321.
4. Saito, N.,Haneda, H.,Sekiguchi, T.,Ohashi, N.,Sakaguchi, I.,Koumoto, K.(2002).Low-Temperature Fabrication of Light-Emitting Zinc Oxide Micropatterns Using Self-Assembled Monolayers.Adv Mater,14,418-421.
5. F. Streintz, Annals of Physics, (Leipzig）, 9 854 ,(1902）.
6. Weng, W. Y.,Chang, S. J.,Hsu, C. L.,Hsueh, T. J.,Chang, S. P.(2010).A Lateral ZnO Nanowire Photodetector Prepared on Glass Substrate.Journal of The Electrochemical Society,157(2),K30-K33.
7. 黃奕盛(2006)。私立大同大學材料工程研究所。
8. 劉吉平（編）,赫向陽（編）,林鴻明（審校）(2003).奈米科學與技術.世貿出版社.
9. 顧鴻壽(2008).太陽能電池元件導論.全威圖書.