Hot-carrier Induced Light Emission in Submicron CMOS Devices

次微米互補式金氧半元件的熱載子發光效應

10.29770/JTCMT.200809.0003

李修至(Hsiu-Chih Lee)；李小珍(Hsaio-Chen Lee)

發光元件 ； 金氧半製程 ； 離子化傳導 ； 法蘭克－普爾Frenkel-Poole發射 ； light emitting device ； CMOS process ； ionic conduction ； Frenkel-Poole emission

台北海洋技術學院學報

1卷2期（2008 / 09 / 01）

23 - 33

英文

在金氧半場效電晶體(MOSFET)中，將汲極(Drain)和源極(Source)浮接，由閘極(Gate)至基體(Substrate)的結構就形成金氧半二極體；若浮接閘極，由汲極及／或源極相對於基體的結構就是p-n二極體。無論是金氧半二極體或p-n二極體的結構，均可發現在其不同材質的介面都有光的產生。由於不同的二極體結構在不同的偏壓條件下，會呈現出不同的特性與光譜，推斷這些發光特性是受到不同電場的影響。當載子受到電場的作用獲得能量而較為活躍時，即為熱載子，而發光的產生原因可能就是載子受電場作用造成的，其機制除了價電帶中，載子的帶內移動或傳輸外，穿透及離子化撞擊很可能也是發光的機制。

MOS and p-n diodes formed by the part structure of a MOSFET made from standard process were found emitting light at the interfaces of these devices. The structures under different bias conditions have their special characteristics and light spectra. As the device scaling down, electric field affects the behavior of a submicron device strongly. Hot carriers are caused by electric field and are responsible for the light emission in these devices. Beside the intra-band transition at conduction band, which can be enhanced by electric field, the tunneling and impact ionization are also caused by the strong electric field. Their influences on the light emission in our devices were investigated.

1. A.G. Chynoweth,K. G. McKay(1956).Photon emission from avalanche breakdown in silicon.Physical Review,102(2),369-376.
2. C.T. Wang(1992).Hot carrier design considerations for MOS devices and circuits.Van Nostrand Reinhold:
3. D.J. Lockwood(ed.)(1998).Light emission in silicon: From physics to devices.San Diego:Academic Press.
4. H.Aharoni,M. du Plessis(2004).Low-operating-voltage integrated silicon light-emitting devices.IEEE J. Quantum Electron,40,557-562.
5. H.-C. Lee,S.-C. Lee,Y.-P. Lin,C.-K. Liu(2005).All Si-based low operating-voltage and low power-dissipation device for optical interface.E88-C(7),1490-1494.
6. J. Bude,N. Sano,A. Yoshii(1992).Hot-carrier luminescence in Si.Physical Review B,45(11),5848-5856.
7. J. Kramer,P. Seitz,E. F. Steigmeier,H. Auderset,B. Delley,H. Balters(1993).Light-emitting devices in industrial CMOS technology.Sensors and Actuators A,37,527-533.
8. L. W. Snyman,M. du Plessis,E. Seevinck,H. Aharoni(1999).An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface.IEEE Electron Device Lett,20,614-617.
9. S. M. Sze(1981).Physics of semiconductor devices.New York:Wiley.
10. S. Tam,C. Hu(1984).Hot-electron-induced photon and photocarrier generation in silicon MOSFET's.IEEE Trans. Electron Devices,ED-31(9),1264-1273.