SU-8光阻在矽晶圓基材上製作微流道面板之研究

Study for Micro-Channel Fabrication with SU-8 Photoresist on Silicon Base

10.6989/JN.200612.0023

莊勝雄(Sheng-Hsiung Chuang)；游士諄(Shih-Chun Yu)；林明俊(Ming-Chung Lin)；周祖亮(Tsu-Liang Chou)

微影 ； 軟烤 ； 曝光 ； 曝後烤 ； 顯影 ； 硬烤 ； Photolithography ； Soft Bake ； Exposure ； Post Exposure Bake ； Develop ； Hard Bake

南亞學報

26期（2006 / 12 / 01）

23 - 36

繁體中文

本文主要是以UV微影製程，搭配SU-8 2050厚膜光阻來製作微流道結構。首先以Auto-CAD設計繪出微流道圖案（Pattern）並製成塑膠光罩，然後再以光罩製作長度2mm，寬度分別為40μm、90μm、200μm，深度90μm，線寬為20μm之微流道結構；並由3D顯微鏡檢測產品品質，進而建立UV光微影標準作業流程及各項參數控制，以提供後續研究參考的依據。研究中發現以最高轉速1100rpm旋塗SU-8 2050厚膜光阻；在室溫靜置30分；以20分鐘時間由20°C上升至90°C預軟烤後，以90°C軟烤60分鐘，再慢慢降至室溫；曝光時間30秒；以65°C預曝後烤2分鐘，然後以100°C曝後烤10分鐘，再慢慢降至室溫；室溫顯影8分鐘；室溫定影1分鐘；50°C預硬烤2分鐘，然後以120°C硬烤5分鐘等步驟；相較於設計值，可得到寬度誤差低於10%與高度誤差低於4%的最佳製作結果。

For silicon based micro-channel fabrication, the UV photolithography process along with the SU-8 2050 photoresist, was used in this study. The AutoCAD software was used firstly to design and plot the pattern of micro channel, and the plastic mask was made with this pattern. Next, the mask was applied to build the micro channel structure, with dimensions of 2 mm in length, 40μm, 90μm, 200μm in width respectively, 90μm in depth and 20μm in line width. At last, the quality of products was detected by a 3D laser microscope. It is hopeful that the setup of standards of UV photolithographic manufacture processes and all the control parameters can be used as a guideline of latter researches.According to the results, it was found that the optimum fabrication process of micro channel, with height and width errors less than 4% and 10% respectively, could be obtained to operate in following steps: to begin with, wafer is coated with SU-8 2050 photoresist at maximum rotational speed 1100 rpm, and exposed 30 minutes at room temperature. On next, rising the temperature from 20°C to 90°C during the 20 minutes time interval for Pre-Soft Bake, then, Soft Bake 60 minutes at 90°C and cool down gradually to room temperature. The time of exposure is 30 seconds, after that, Pre-Post Exposure Bake 2 minutes at 65°C, Post Exposure Bake 10 minutes at 100°C, and cool down gradually to room temperature again. Finally, Develop 8 minutes at room temperature, Pre-Hard Bake 2 minutes at 50°C, and Hard Bake 5 minutes at 120°C.